Datasheet Details
Part number:
DMN53D0L
Manufacturer:
File Size:
338.79 KB
Description:
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
* N-Channel MOSFET
* Low On-Resistance
* Very Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* ESD Protected
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Haloge
DMN53D0L, N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
SOT23 Mechanical Data * Package: SOT23 * Package Material: Molded Plastic, “Gr
DMN53D0L Distributor
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