DMN53D0L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Diodes

Description

DMN53D0L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 500.
and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it id.

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Datasheet Specifications

Part number: DMN53D0L
Manufacturer: DIODES ↗
File Size: 338.79 KB
Datasheet: DMN53D0L-Diodes.pdf
Description: N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

* N-Channel MOSFET
* Low On-Resistance
* Very Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* ESD Protected
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Haloge

Applications

* This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. SOT23 Mechanical Data
* Package: SOT23
* Package Material: Molded Plastic, “Green” Molding Comp

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DMN53D0L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Diodes

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