DMN53D0L Datasheet - Diodes

DMN53D0L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. SOT23 Mechanical Data * Package: SOT23 * Package Material: Molded Plastic, “Gr.

DMN53D0L Features

* N-Channel MOSFET

* Low On-Resistance

* Very Low Gate Threshold Voltage

* Low Input Capacitance

* Fast Switching Speed

* Low Input/Output Leakage

* ESD Protected

* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

* Haloge

DMN53D0L-Diodes.pdf