DMN53D0LT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Diodes

Description

NEW PRODUCT DMN53D0LT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID .
and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making i.

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Datasheet Specifications

Part number: DMN53D0LT
Manufacturer: DIODES ↗
File Size: 458.41 KB
Datasheet: DMN53D0LT-Diodes.pdf
Description: N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

* N-Channel MOSFET
* Low On-Resistance
* Very Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/ Output Leakage
* Ultra-Small Surface Mount Package
* ESD Protected to 2kV
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Applications

* This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* Motor Driving
* Power Management Functions

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DMN53D0LT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Diodes

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