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DMN53D0U N-Channel MOSFET

DMN53D0U Description

NEW PRODUCT DMN53D0U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 50V RDS(ON) 2Ω @ VGS = 5V 2.5Ω @ VGS = 2.5V ID T.
and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching per.

DMN53D0U Features

* N-Channel MOSFET
* Low On-Resistance
* Very Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* ESD Protected
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Haloge

DMN53D0U Applications

* Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* Case: SOT23
* Case Material: Molded Plastic, “Green” Molding Compound.

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