* Low On-Resistance
* Very Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* ESD Protected to 2kV
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* T
DMN53D0LQ Datasheet (661.54 KB)
DMN53D0LQ
661.54 KB
N-channel mosfet.
DMN53D0LQ N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 50.
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