Datasheet4U Logo Datasheet4U.com

DMN53D0LV

DUAL N-CHANNEL ENHANCEMENT MODE FIELD-EFFECT TRANSISTOR

DMN53D0LV Features

* Dual N-Channel MOSFET

* Low On-Resistance

* Very Low Gate Threshold Voltage

* Low Input Capacitance

* Fast Switching Speed

* Low Input/ Output Leakage

* Ultra-Small Surface-Mount Package

* ESD Protected to 2kV

* Totally Lead-Free & Fully RoHS Compliant (Notes 1

DMN53D0LV Datasheet (609.40 KB)

Preview of DMN53D0LV PDF

Datasheet Details

Part number:

DMN53D0LV

Manufacturer:

DIODES ↗

File Size:

609.40 KB

Description:

Dual n-channel enhancement mode field-effect transistor.
DMN53D0LV DUAL N-CHANNEL ENHANCEMENT MODE FIELD-EFFECT TRANSISTOR Product Summary BVDSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25.

📁 Related Datasheet

DMN53D0L - N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR (Diodes)
DMN53D0L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 500.

DMN53D0LDW - N-CHANNEL MOSFET (Diodes)
NEW PRODUCT DMN53D0LDW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5.

DMN53D0LDWQ - 50V Dual N-CHANNEL MOSFET (DIODES)
DMN53D0LDWQ 50V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 0.46A 0..

DMN53D0LQ - N-Channel MOSFET (Diodes)
DMN53D0LQ N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 50.

DMN53D0LT - N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR (Diodes)
NEW PRODUCT DMN53D0LT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID .

DMN53D0LW - N-CHANNEL MOSFET (Diodes)
Product Summary BVDSS 50V RDS(ON) 2.0Ω @ VGS = 10V 3.0Ω @ VGS = 5V ID TA = +25°C 360mA 250mA Description and Applications This new generation MOSF.

DMN53D0U - N-Channel MOSFET (Diodes)
NEW PRODUCT DMN53D0U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 50V RDS(ON) 2Ω @ VGS = 5V 2.5Ω @ VGS = 2.5V ID T.

DMN5010VAK - DUAL N-CHANNEL MOSFET (Diodes)
Features  Dual N-Channel MOSFET  Low On-Resistance  Very Low Gate Threshold Voltage, 1.0V Max  Low Input Capacitance  Fast Switching Speed  Low .

TAGS

DMN53D0LV DUAL N-CHANNEL ENHANCEMENT MODE FIELD-EFFECT TRANSISTOR Diodes

Image Gallery

DMN53D0LV Datasheet Preview Page 2 DMN53D0LV Datasheet Preview Page 3

DMN53D0LV Distributor