DMN53D0LV DUAL N-CHANNEL ENHANCEMENT MODE FIELD-EFFECT TRANSISTOR

Diodes

Description

DMN53D0LV DUAL N-CHANNEL ENHANCEMENT MODE FIELD-EFFECT TRANSISTOR Product Summary BVDSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25.
and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it id.

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Datasheet Specifications

Part number: DMN53D0LV
Manufacturer: DIODES ↗
File Size: 609.40 KB
Datasheet: DMN53D0LV-Diodes.pdf
Description: DUAL N-CHANNEL ENHANCEMENT MODE FIELD-EFFECT TRANSISTOR

Features

* Dual N-Channel MOSFET
* Low On-Resistance
* Very Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/ Output Leakage
* Ultra-Small Surface-Mount Package
* ESD Protected to 2kV
* Totally Lead-Free & Fully RoHS Compliant (Notes 1

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DMN53D0LV DUAL N-CHANNEL ENHANCEMENT MODE FIELD-EFFECT TRANSISTOR Diodes

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