DMN5L06DMKQ N-Channel MOSFET

Diodes

Description

NEW PRODUCT DMN5L06DMKQ DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 50V RDS(ON) max 2.0Ω @ VGS = 5V 2.5Ω @ VGS =.
and Applications This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high.

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Datasheet Specifications

Part number: DMN5L06DMKQ
Manufacturer: DIODES ↗
File Size: 555.12 KB
Datasheet: DMN5L06DMKQ-Diodes.pdf
Description: N-Channel MOSFET

Features

* Low On-Resistance
* Very Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* ESD Protected up to 2kV
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)

Applications

* This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* General Purpose Interfacing Switch
* Power Management Functions Mechanical Data
* Case: SOT-26
* Case Mat

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DMN5L06DMKQ N-Channel MOSFET Diodes

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