DMP10H4D2S 100V P-Channel MOSFET

Diodes

Description

Product Summary BVDSS -100V RDS(ON) 4.2Ω @ VGS = -10V 5.0Ω @ VGS = -4.0V ID TA = +25°C -0.27A -0.24A .
and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, mak.

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Datasheet Specifications

Part number: DMP10H4D2S
Manufacturer: DIODES ↗
File Size: 534.30 KB
Datasheet: DMP10H4D2S-Diodes.pdf
Description: 100V P-Channel MOSFET

Features

* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Small Surface-Mount Package
* ESD Protected up to 2KV (HBM)
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* This part is quali

Applications

* This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
* DC-DC converters
* Power-management functions
* Battery-operated systems and solid-state

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DMP10H4D2S 100V P-Channel MOSFET Diodes

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