DSS4160DS Datasheet, Transistor, Diodes

DSS4160DS Features

• Transistor
• BVCEO > 60V
• IC = 1A high Continuous Collector Current
• ICM = 2A Peak Pulse Current
• RCE(sat) = 100mΩ for a Low Equivalent On-Resistance
• L

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DSS4160DS

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DIODES ↗

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📄 Datasheet

Description:

Dual npn low saturation transistor.

DSS4160DS Application

• Applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on D

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DSS4160DS

Diodes

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