DSS4160FDB Datasheet, Transistor, Diodes

DSS4160FDB Features

• Transistor
• BVCEO > 60V
• IC = 1A High Continuous Collector Current
• RCE(SAT) = 180mΩ for a Low Equivalent On-Resistance
• Low Saturation Voltage VCE(SAT) < 220mV

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Part number:

DSS4160FDB

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DIODES ↗

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📄 Datasheet

Description:

60v dual npn low vce(sat) transistor.

DSS4160FDB Application

• Applications
• RθJA Efficient, 40% Lower than SOT26
• Low Profile 0.6mm High Package for Thin Applications
• Totally Lead-Fr

TAGS

DSS4160FDB

Diodes

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