DSS4160FDB - 60V DUAL NPN LOW VCE(SAT) TRANSISTOR
DSS4160FDB Features
* BVCEO > 60V
* IC = 1A High Continuous Collector Current
* RCE(SAT) = 180mΩ for a Low Equivalent On-Resistance
* Low Saturation Voltage VCE(SAT) < 220mV @ 1A
* PD up to 2.47W for Power-Demanding Applications
* RθJA Efficient, 40% Lower than SOT26
* Low Profile 0.6mm High
