Datasheet4U Logo Datasheet4U.com

FCX591

60V PNP MEDIUM POWER TRANSISTOR

FCX591 Features

* BVCEO > -60V

* IC = -1A high Continuous Collector Current

* ICM = -2A Peak Collector Current

* RCE(SAT) = 295mΩ for a Low Equivalent On-Resistance

* hFE characterized up to 2A for high current gain hold up

* Complementary NPN type: FCX491

* T

FCX591 Datasheet (421.96 KB)

Preview of FCX591 PDF

Datasheet Details

Part number:

FCX591

Manufacturer:

DIODES ↗

File Size:

421.96 KB

Description:

60v pnp medium power transistor.

📁 Related Datasheet

FCX591 - PNP Silicon Planar Medium Power High Perormance Transistor (GME)
Production specification PNP Silicon Planar Medium Power High Perormance Transistor FCX591 FEATURES  Complementary type:FCX491. Pb Lead-free ORDE.

FCX591 - GENERAL PURPOSE TRANSISTOR (HOTTECH)
REPLACEMENT TYPE : FCX591 FEATURES  Power Dissipation HECX591(PNP) GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) P.

FCX591A - 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR (Diodes)
A Product Line of Diodes Incorporated FCX591A 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features • BVCEO > -40V • Maximum Continuous Cu.

FCX591AQ - PNP SILICON PLANAR MEDIUM POWER TRANSISTOR (Diodes)
FCX591AQ 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirem.

FCX593 - 100V PNP MEDIUM POWER TRANSISTOR (Diodes)
Features • BVCEO > -100V • IC = -1A high Continuous Collector Current • ICM = -2A Peak Collector Current • Low saturation voltage VCE(sat) < -200mV @ .

FCX596 - PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR (Zetex Semiconductors)
SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - NOVEMBER 1995 7 FCX596 D PARTMARKING DETAIL – P96 S G SOT89 SYMBOL VCBO VCEO VEBO ICM IC .

FCX555 - PNP HIGH VOLTAGE SWITCHING TRANSISTOR (Diodes)
A Product Line of Diodes Incorporated Green FCX555 150V PNP HIGH VOLTAGE SWITCHING TRANSISTOR IN SOT89 Features • BVCEO > -150V • BVCEV > -180V • IC .

FCX558 - PNP HIGH VOLTAGE TRANSISTOR (Diodes)
Features  BVCEO > -400V  IC = -200mA High Continuous Current  ICM = -500mA Peak Pulse Current  Excellent hFE Characteristics up to -100mA  Low Sa.

TAGS

FCX591 60V PNP MEDIUM POWER TRANSISTOR Diodes

Image Gallery

FCX591 Datasheet Preview Page 2 FCX591 Datasheet Preview Page 3

FCX591 Distributor