ELM52376A-S Datasheet PDF (Single N-channel MOSFET)

ELM52376A-S - Single N-channel MOSFET

Description

ELM52376A-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance.

Features

Vds=60V.
Id=3.6A (Vgs=10V).
Rds(on) < 70mΩ (Vgs=10V).
Rds(on) < 78mΩ (Vgs=4.5V).
Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Junction and storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj, Tstg Ta=25°C. Unless otherwise noted. Limit Unit 60 V ±20 V 3.6 2.8 A 10 A 1.25 0.80 W - 55 to 150 °C.
Ther.

Datasheet Details

Part number	ELM52376A-S
Manufacturer	ELM
File Size	855.79 KB
Description	Single N-channel MOSFET
Datasheet	ELM52376A-S Datasheet
Additional preview pages of the ELM52376A-S datasheet.

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Full PDF Text Transcription

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Single N-channel MOSFET ELM52376A-S ■General description ELM52376A-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. http://www.elm-tech.com ■Features • Vds=60V • Id=3.6A (Vgs=10V) • Rds(on) < 70mΩ (Vgs=10V) • Rds(on) < 78mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Junction and storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj, Tstg Ta=25°C. Unless otherwise noted. Limit Unit 60 V ±20 V 3.6 2.8 A 10 A 1.25 0.80 W - 55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Rθja Typ. Max.

Published: Feb 3, 2019 |