M12L2561616A-6TG2S, M12L2561616A - Synchronous DRAM

Name: M12L2561616A-6TG2S
SKU: M12L2561616A-6TG2S-1345830

ESMT

The M12L2561616A-6TG2S by ESMT is a Synchronous DRAM. Below is the official datasheet preview.

Datasheet Details

Part number	M12L2561616A-6TG2S, M12L2561616A
Manufacturer	ESMT
File Size	1.66 MB
Description	Synchronous DRAM
Datasheet	M12L2561616A_EliteSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: M12L2561616A-6TG2S, M12L2561616A. Please refer to the document for exact specifications by model.
Additional preview pages of the M12L2561616A-6TG2S datasheet.

The M12L2561616A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits.

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs - CAS Latency (2 & 3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst Read single write operation.
DQM for masking.
Auto & self refresh.
64ms refresh period (8K cycle).
All Pb-free products are RoHS-Compli.

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Published: Mar 24, 2019 |