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M12L2561616A-7BG2S, M12L2561616A Synchronous DRAM

M12L2561616A-7BG2S Description

ESMT SDRAM .
The M12L2561616A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits.

M12L2561616A-7BG2S Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs - CAS Latency (2 & 3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave)
* All inputs are sampled at the positiv

M12L2561616A-7BG2S Applications

* PIN CONFIGURATION (TOP VIEW) (TSOPII 54L, 400milX875mil Body, 0.8mm Pin Pitch) VDD 1 DQ0 2 VDDQ 3 DQ1 4 DQ2 5 VSSQ 6 DQ3 7 DQ4 8 VDDQ 9 DQ5 10 DQ6 11 VSSQ 12 DQ7 13 VDD 14 LDQM 15 W E 16 CAS 17 RAS 18 CS 19 BA0 20 BA1 21 A10/AP 22 A0 23 A1 24 A2 25 A3 26 VDD 27 54 VSS 53 DQ15 52 VSSQ 51 DQ14 50

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: M12L2561616A-7BG2S, M12L2561616A. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
M12L2561616A-7BG2S, M12L2561616A
Manufacturer
ESMT
File Size
1.66 MB
Datasheet
M12L2561616A_EliteSemiconductor.pdf
Description
Synchronous DRAM
Note
This datasheet PDF includes multiple part numbers: M12L2561616A-7BG2S, M12L2561616A.
Please refer to the document for exact specifications by model.

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Synchronous DRAM ESMT
ESMT M12L2561616A-7BG2S-like datasheet