M14D1G1664A-1.5BG2P, M14D1G1664A - DDR-II SDRAM

ESMT

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M14D1G1664A-1.5BG2P Datasheet Preview — This datasheet PDF includes multiple part numbers: M14D1G1664A-1.5BG2P, M14D1G1664A. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	M14D1G1664A-1.5BG2P, M14D1G1664A
Manufacturer	ESMT
File Size	1.98 MB
Description	DDR-II SDRAM
Datasheet	M14D1G1664A-ESMT.pdf
Note	This datasheet PDF includes multiple part numbers: M14D1G1664A-1.5BG2P, M14D1G1664A. Please refer to the document for exact specifications by model.

M14D1G1664A-1.5BG2P Product details

Description

Pin Name A0~A12, BA0~BA2 DQ0~DQ15 RAS CAS WE VSS VDD DQS, DQS (LDQS, LDQS UDQS, UDQS) ODT NC Function Address inputs - Row address A0~A12 - Column address A0~A9 A10/AP : Auto Precharge BA0~BA2 : Bank selects (8 Banks) Data-in/Data-out Command input Command input Command input Ground Power Bi-directional differential Data Strobe.LDQS and LDQS are DQS for DQ0~DQ7; UDQS and UDQSare DQS for DQ8~DQ15. On-Die-Termination.ODT is only applied to DQ0~DQ15, DM, DQS and DQS .No connection Pin Name F

Features

JEDEC Standard.
VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V.
Internal pipelined double-data-rate architecture; two data access per clock cycle.
Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.
On-chip DLL.
Differential clock inputs (CLK and CLK ).
DLL aligns DQ and DQS transition with CLK transition.
8 bank operation.
CAS Latency : 3, 4, 5, 6, 7.
Additive Latency: 0, 1, 2, 3, 4, 5, 6.

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Published: Aug 18, 2025 |