2N3955 - N-Channel Dual Silicon Junction Field-Effect Transistor

Datasheet Details

Part number	2N3955
Manufacturer	ETC
File Size	67.13 KB
Description	N-Channel Dual Silicon Junction Field-Effect Transistor
Datasheet	2N3955 Datasheet
Additional preview pages of the 2N3955 datasheet.

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Full PDF Text Transcription

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01/99 B-5 2N3954, 2N3955, 2N3956 N-Channel Dual Silicon Junction Field-Effect Transistor ¥ Low and Medium Frequency Differential Amplifiers ¥ High Input Impedance Amplifiers Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Total Device Power Dissipation (each side) @ 85°C Case Temperature (both sides) Power Derating (both sides) – 50 V 50 mA 250 mW 500 mW 4.

Published: Mar 23, 2005 |