2N3955 Datasheet - ETC

2N3955 N-Channel Dual Silicon Junction Field-Effect Transistor

01/99 B-5 2N3954, 2N3955, 2N3956 N-Channel Dual Silicon Junction Field-Effect Transistor Low and Medium Frequency Differential Amplifiers High Input Impedance Amplifiers Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Total Device Power Dissipation (each side) @ 85°C Case Temperature (both sides) Power Derating (both sides) 50 V 50 mA 250 mW 500 mW 4.3 mW/°C At 25°C free air temperature: Static Electrical Characterist.

2N3955_ETC.pdf

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Datasheet Details

Part number:

2N3955

Manufacturer:

ETC

File Size:

67.13 KB

Description:

N-channel dual silicon junction field-effect transistor.

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2N3955 2N3955 N-Channel Dual Silicon Junction Field-Effect Transistor ETC

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