Datasheet4U Logo Datasheet4U.com

2N3950 - NPN silicon RF power transistor

📥 Download Datasheet

Datasheet preview – 2N3950

Datasheet Details

Part number 2N3950
Manufacturer Motorola
File Size 272.03 KB
Description NPN silicon RF power transistor
Datasheet download datasheet 2N3950 Datasheet
Additional preview pages of the 2N3950 datasheet.

📁 Similar Datasheet

  • 2N3954 - N-Channel Monolithic Dual JFETs (National Semiconductor)
  • 2N3954 - MONOLITHIC DUAL N-CHANNEL JFET (Micross)
  • 2N3954 - monolithic dual n-channel JFET (Siliconix)
  • 2N3954A - N-Channel Monolithic Dual JFETs (National Semiconductor)
  • 2N3954A - MONOLITHIC DUAL N-CHANNEL JFET (Micross)
  • 2N3954A - monolithic dual n-channel JFET (Siliconix)
  • 2N3955 - N-Channel Dual Silicon Junction Field-Effect Transistor (ETC)
  • 2N3955 - N-Channel Monolithic Dual JFETs (National Semiconductor)
  • 2N3955 - MONOLITHIC DUAL N-CHANNEL JFET (Micross)
  • 2N3955 - monolithic dual n-channel JFET (Siliconix)
Other Datasheets by Motorola

Full PDF Text Transcription

Click to expand full text
2N3950 (SILICON) NPN silicon RF power transistor designed for high-power RF amplifier applications in military and industrial equipment. CASE 36 (10·60) EmiHer common to stud end eese MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Collector-Emitter Voltage Collector-Base Voltage VCEO Ves Emitter-Base Voltage VES Collector-Current - Continuous IC Total Device Dissipation @ TA .. 25·C PD Derate above 25·C Total Device Dissipation @ TC =25·C PD Derate above 25·C Operating and storage Junction Temperature Range TJ • Tstg Value 35 65 4.0 3.3 2.8 16 70 0.4 -65 to +200 Unit Vdc Vdc Vdc Amp Watts mWrC! Watts WrC ·C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal ReSistance, Junction to Case Symbol Max 'JA 62.
Published: |