2N3950 Datasheet (Motorola) - NPN silicon RF power transistor

2N3950, NPN silicon RF power transistor

2N3950 (SILICON) NPN silicon RF power transistor designed for high-power RF amplifier applications in military and industrial equipment.

CASE 36 (10 60) EmiHer common to stud end eese MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Collector-Emitter Voltage Collector-Base Voltage VCEO Ves Emitter-Base Voltage VES Collector-Current - Continuous IC Total Device Dissipation @ TA ..

25 C PD Derate above 25 C Total Device Dissipation @ TC =25 C PD Derat