IRF7N60

POWER MOSFET

IRF7N60 Features

* Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS Specified at Elevated Temperature PIN CONFIGURATION TO-220/TO-220FP SYMBOL D Front View G ATE

IRF7N60 General Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers.

IRF7N60 Datasheet (217.46 KB)

IRF7N60 Datasheet Preview — Preview of IRF7N60 PDF

Datasheet Details

Part number:

IRF7N60

Manufacturer:

ETC

File Size:

217.46 KB

Description:

Power mosfet.

📁 Related Datasheet

IRF7N60 POWER MOSFET (Suntac Electronic)

IRF7N1405 HEXFET-R POWER MOSFET (International Rectifier)

IRF7NA2907 HEXFET POWER MOSFET (International Rectifier)

IRF7NJZ44V HEXFET-R POWER MOSFET (International Rectifier)

IRF710 N-Channel Power MOSFET (Intersil Corporation)

IRF710 N-Channel MOSFET (INCHANGE)

IRF710 N-Channel MOSFET (ART CHIP)

IRF710 Power MOSFET (Vishay)

IRF7101 Power MOSFET (International Rectifier)

IRF7101PBF Power MOSFET (International Rectifier)

TAGS

IRF7N60 POWER MOSFET ETC

Image Gallery

IRF7N60 Features

IRF7N60 General Description

Datasheet Details

File Size:

Description:

IRF7N60 Distributor