Datasheet Details
Part number:
IRF7N1405
Manufacturer:
International Rectifier
File Size:
165.83 KB
Description:
HEXFET-R POWER MOSFET
Features
* n n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Surface Mount Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt T
IRF7N1405_InternationalRectifier.pdf
IRF7N1405, HEXFET-R POWER MOSFET
www.DataSheet4U.com PD - 94643 HEXFET® POWER MOSFET SURFACE MOUNT (SMD-1) IRF7N1405 55V, N-CHANNEL Product Summary Part Number IRF7N1405 BVDSS 55V RDS(on) ID 0.0053Ω 55A Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the
IRF7N1405 Distributor
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