EDE1108AASE Datasheet - Elpida Memory

EDE1108AASE (EDE1104AASE / EDE1108AASE) 1G bits DDR2 SDRAM organized

EDE1108AASE Features

* Power supply: VDD, VDDQ = 1.8V ± 0.1V

* Double-data-rate architecture: two data transfers per clock cycle

* Bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver

* DQS is edge aligned

Datasheet Details

EDE1108AASE

Elpida Memory

693.73 KB

(ede1104aase / ede1108aase) 1g bits ddr2 sdram organized.

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