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PTB20146 0.4 Watt/ 1.8-2.0 GHz Cellular Radio RF Power Transistor

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Description

e PTB 20146 0.4 Watt, 1.8 *2.0 GHz Cellular Radio RF Power Transistor .
The 20146 is a class A, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.

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Datasheet Specifications

Part number
PTB20146
Manufacturer
Ericsson
File Size
39.29 KB
Datasheet
PTB20146_Ericsson.pdf
Description
0.4 Watt/ 1.8-2.0 GHz Cellular Radio RF Power Transistor

Applications

* Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • • • 0.4 Watt, 1.8
* 2.0 GHz Class A Characteristics Tested to solderability standards: - IEC-68-2-54 - ANSI/J Std-002-A Gold Met

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