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EM638165TS - 4M x 16 bit Synchronous DRAM

Features

  • Fast access time from clock: 4.5/5.4/5.4 ns.
  • Fast clock rate: 200/166/143 MHz.
  • Fully synchronous operation.
  • Internal pipelined architecture.
  • 1M word x 16-bit x 4-bank.
  • Programmable Mode registers - CAS Latency: 2, or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: interleaved or linear burst - Burst stop function.
  • Auto Refresh and Self Refresh.
  • 4096 refresh cycles/64ms.
  • CKE power down mode.
  • Single.

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Datasheet Details

Part number EM638165TS
Manufacturer Etron Technology
File Size 482.84 KB
Description 4M x 16 bit Synchronous DRAM
Datasheet download datasheet EM638165TS Datasheet

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Full PDF Text Transcription

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EtronTech EM638165TS Etron Confidential 4M x 16 bit Synchronous DRAM (SDRAM) Advanced (Rev 3.2, Mar. /2012) Features • Fast access time from clock: 4.5/5.4/5.4 ns • Fast clock rate: 200/166/143 MHz • Fully synchronous operation • Internal pipelined architecture • 1M word x 16-bit x 4-bank • Programmable Mode registers - CAS Latency: 2, or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: interleaved or linear burst - Burst stop function • Auto Refresh and Self Refresh • 4096 refresh cycles/64ms • CKE power down mode • Single +3.3V ± 0.3V power supply • Interface: LVTTL • 54-pin 400 mil plastic TSOP II package - Pb and Halogen Free Overview Table1. Key Specifications EM638165 tCK3 Clock Cycle time(min.) tAC3 Access time from CLK(max.) tRAS Row Active time(min.
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