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EMB05N10H - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Datasheet Details

Part number EMB05N10H
Manufacturer Excelliance MOS
File Size 512.00 KB
Description Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMB05N10H-ExcellianceMOS.pdf

EMB05N10H Product details

Description

N-CH BVDSS 100V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 5.5mΩ 7.5mΩ ID @TC=25℃ 122.0A ID @TA=25℃ 16.0A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current VGS TC = 25 °C TC = 100 °C ID Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM Avalanche Current Avalanche Energy Repet

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