EMB20D03H Datasheet - Excelliance MOS

EMB20D03H MOSFET

N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 30V ‐30V RDSON (MAX.) 6.5mΩ 20mΩ ID 26A ‐15A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH, ID=15A, RG=25Ω(N) L = 0.1mH, ID=‐10A, RG=25Ω.

EMB20D03H-ExcellianceMOS.pdf