EMB20N03VAT Datasheet - Excelliance MOS

EMB20N03VAT MOSFET

EMB20N03VAT N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 7A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free Bottom View S D D S D GD D PIN 1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L =.

EMB20N03VAT-ExcellianceMOS.pdf