EMB20N03VL Datasheet - Excelliance MOS

EMB20N03VL N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) @VGS=10V RDSON (MAX.) @VGS=4.5V 20mΩ 30mΩ ID@TC=25°C 22A Single N‐Channel MOSFET UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate‐Source Voltage Continuous Drain Current TC = 25 °C TA = 25 °C Pulsed Drain Current1 TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH, IAS=10.

EMB20N03VL-ExcellianceMOS.pdf