Part number:
EMB20N03G
Manufacturer:
Excelliance MOS
File Size:
181.72 KB
Description:
N-channel logic level enhancement mode field effect transistor.
Datasheet Details
Part number:
EMB20N03G
Manufacturer:
Excelliance MOS
File Size:
181.72 KB
Description:
N-channel logic level enhancement mode field effect transistor.
EMB20N03G, N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 9.5A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy L = 0.1mH, ID=8A, RG=25Ω Repetitive Avalanche Energy2 L = 0.05mH Power Dissipati
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