EMB22A04G Datasheet, Transistor, Excelliance MOS

PDF File Details

Part number:

EMB22A04G

Manufacturer:

Excelliance MOS

File Size:

190.26kb

Download:

📄 Datasheet

Description:

Dual n-channel logic level enhancement mode field effect transistor.

TAGS

EMB22A04G

Excelliance MOS

📁 Related Datasheet

EMB22C04A - MOSFET (Excelliance MOS)
N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS RDSON (MAX.) ID N‐CH 40V 22mΩ 7.5A P‐CH ‐40V 42mΩ ‐6A D.

EMB22C04G - MOSFET (Excelliance MOS)
N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 40V ‐40V RDSON (MAX.) 22mΩ 42mΩ ID 7.5A .

EMB22C04H - N & P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 40V ‐40V RDSON (MAX.) 22mΩ 50mΩ ID 33A .

EMB22N04A - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V D RDSON (MAX.) 22mΩ ID 15A G UIS, Rg 100% Tested .

EMB22N04G - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V D RDSON (MAX.) 22mΩ ID 9A G S Pb‐Free Lead Plating.

EMB2 - PNP -100mA -50V Complex Digital Transistors (Rohm)
EMB2 / UMB2N / IMB2A PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Tr1 and Tr2 EMT6 (6.

EMB20D03H - MOSFET (Excelliance MOS)
.

EMB20N03A - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 15A G UIS, Rg 100% Tested .

EMB20N03G - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 9.5A G UIS, Rg 100% Tested .

EMB20N03Q - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 22mΩ ID 6A G UIS, Rg 100% Tested S.