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EMB22C04H Datasheet - Excelliance MOS

EMB22C04H-ExcellianceMOS.pdf

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Datasheet Details

Part number:

EMB22C04H

Manufacturer:

Excelliance MOS

File Size:

228.90 KB

Description:

N & p-channel logic level enhancement mode field effect transistor.

EMB22C04H, N & P-Channel Logic Level Enhancement Mode Field Effect Transistor

N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 40V ‐40V RDSON (MAX.) 22mΩ 50mΩ ID 33A ‐22A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, IAS=15A, RG=25Ω(

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