EMB24B03G Datasheet - Excelliance MOS

EMB24B03G MOSFET

EMB24B03G Dual P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V RDSON (MAX.) 24mΩ ID ‐8A UIS, Rg 100% Tested Pb‐Free Lead Plating ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ‐8 ID TC = 100 °C ‐6 IDM ‐32 Avalanche Current IAS ‐12 Avalanche Energy L = 0.1mH, ID=‐8A, RG=25Ω EAS 3.2 Rep.

EMB24B03G Datasheet (190.85 KB)