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EMB26N10A N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB26N10A Description

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 30mΩ ID 50A G UIS, Rg 100% Tested .

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Datasheet Details

Part number
EMB26N10A
Manufacturer
Excelliance MOS
File Size
226.87 KB
Datasheet
EMB26N10A-ExcellianceMOS.pdf
Description
N-Channel Logic Level Enhancement Mode Field Effect Transistor

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS
Excelliance MOS EMB26N10A-like datasheet