Download Datasheet (179.80 KB)
EMB26N10G
Excelliance MOS
179.80 KB
Mosfet.
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RD.
SON (MAX.)
30mΩ
ID
9A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE M.
📁 Related Datasheet
EMB26N10A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
30mΩ
ID
50A
G
UIS, Rg 100% Tested
.
EMB26N10E - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
30mΩ
ID
50A
G
UIS, Rg 100% Tested
.
EMB26N10F - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
30mΩ
ID
30A
G
UIS, Rg 100% Tested
.
EMB26N10H - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
30mΩ
ID
33A
G
UIS, Rg 100% Tested
.
EMB2 - PNP -100mA -50V Complex Digital Transistors
(Rohm)
EMB2 / UMB2N / IMB2A
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Tr1 and Tr2
EMT6
(6.
EMB20D03H - MOSFET
(Excelliance MOS)
.
