EMB28P03L
Excelliance MOS
562.66kb
Single p-channel logic level enhancement mode field effect transistor.
TAGS
📁 Related Datasheet
EMB28P06V - Single P-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
EMB28P06V
Single P-Channel Logic Level Enhancement Mode Field Effect Transistor
▪Product Summary:
▪ Pin Description:
P-CH
BVDSS
-60V
RDSON (MAX.
EMB28A04G - MOSFET
(Excelliance MOS)
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
40V
RDSON (MAX.)
28mΩ
ID
7A
Pb‐Free Lead Plating & .
EMB28C03G - MOSFET
(Excelliance MOS)
N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH
P‐CH
BVDSS
30V
‐30V
RDSON (MAX.)
28mΩ 40mΩ
ID
7A
‐.
EMB28C04G - MOSFET
(Excelliance MOS)
N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS RDSON (MAX.)
N‐CH 40V 28mΩ
P‐CH ‐40V 44mΩ
D1 G1
D2 G2
.
EMB2 - PNP -100mA -50V Complex Digital Transistors
(Rohm)
EMB2 / UMB2N / IMB2A
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Tr1 and Tr2
EMT6
(6.
EMB20D03H - MOSFET
(Excelliance MOS)
.
EMB20N03A - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
20mΩ
ID
15A
G
UIS, Rg 100% Tested
.
EMB20N03G - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
20mΩ
ID
9.5A
G
UIS, Rg 100% Tested
.
EMB20N03Q - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
22mΩ
ID
6A
G
UIS, Rg 100% Tested
S.
EMB20N03V - N-Channel MOSFET
(Excelliance MOS)
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
RDSON (MAX.)
20mΩ
ID
12A
N‐Channel MOSFET
UIS, Rg 1.
