EMB35N04J, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
40V
D
RDSON (MAX.)
35mΩ
ID 5A
G
S
Pb‐Fr.
EMB35N04V, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
40V
D
RDSON (MAX.)
28mΩ
ID 12A G
UIS, Rg 1.
EMB30P03A, Excelliance MOS
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
D
RDSON (MAX.)
30mΩ
ID
‐22A
G
UIS, .