EMB35N04J Datasheet - Excelliance MOS

EMB35N04J MOSFET

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V D RDSON (MAX.) 35mΩ ID 5A G S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg EMB35N04J LIMITS ±20 5 3.3 20.

EMB35N04J Datasheet (170.32 KB)