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EMB30B03V Datasheet - Excelliance MOS

EMB30B03V MOSFET

Dual P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V RDSON (MAX.) 35mΩ ID ‐6.5A Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg EMB30B03V LIMITS ±20 ‐6.5 .

EMB30B03V Datasheet

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Datasheet Details

Part number:

EMB30B03V

Manufacturer:

Excelliance MOS

File Size:

203.70 KB

Description:

Mosfet.

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EMB30B03V MOSFET Excelliance MOS

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