EMB30P03VAT Datasheet - Excelliance MOS

EMB30P03VAT P-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB30P03VAT P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 30mΩ ID ‐8A G S Pb‐Free Lead Plating & Halogen Free Bottom View S D D S D GD D PIN 1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range .

EMB30P03VAT Datasheet (178.06 KB)