Datasheet Specifications
- Part number
- EMBA1N10Q
- Manufacturer
- Excelliance MOS
- File Size
- 196.96 KB
- Datasheet
- EMBA1N10Q-ExcellianceMOS.pdf
- Description
- N-Channel Logic Level Enhancement Mode Field Effect Transistor
Description
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 110mΩ ID 4.5A G UIS, Rg 100% Teste.
EMBA1N10Q Distributors
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