EMBA1N10Q Datasheet - Excelliance MOS

EMBA1N10Q - N-Channel Logic Level Enhancement Mode Field Effect Transistor

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 110mΩ ID 4.5A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=5A, RG=25Ω L = 0.05mH Power Dissipat.

EMBA1N10Q-ExcellianceMOS.pdf

EMBA1N10Q Datasheet Preview — Preview of EMBA1N10Q PDF

Datasheet Details

Part number:

EMBA1N10Q

Manufacturer:

Excelliance MOS

File Size:

196.96 KB

Description:

N-channel logic level enhancement mode field effect transistor.

EMBA1N10Q Distributor

📁 Related Datasheet

EMBA1N10A EMBA0A10G EMBA0N10A EMBA0N10CS EMBA0N10F EMBA0N10G

📌 All Tags

EMBA1N10Q N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS