EMBJ0N20A Datasheet - Excelliance MOS

EMBJ0N20A MOSFET

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 200V D RDSON (MAX.) 1Ω ID 3.5A G UIS, 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 1mH, ID=1.5A, RG=25Ω L = 0.5mH Power Dissipation TC.

EMBJ0N20A Datasheet (225.21 KB)