EMBJ0N25CS Datasheet - Excelliance MOS

EMBJ0N25CS MOSFET

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 250V D RDSON (MAX.) 1Ω ID 4.4A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 3mH, ID=1A, RG=25Ω L = 1mH Power Dissipation TC .

EMBJ0N25CS Datasheet (225.73 KB)