EMBJ0N20A - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
200V
D
RDSON (MAX.)
1Ω
ID 3.5A G
UIS, 100%.
EMBJ0N20CS - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
200V
D
RDSON (MAX.)
1Ω
ID 3.5A G
UIS, 100%.
EMBJ0N20Q - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
200V
D
RDSON (MAX.)
1Ω
ID 1.1A G
UIS, 100%.
EMBJ0N25A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
250V
D
RDSON (MAX.)
1Ω
ID
4.4A
G
UIS, Rg 100% Tested
.
EMBJ0N25CS - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
250V
D
RDSON (MAX.)
1Ω
ID 4.4A G
UIS, Rg 1.
EMBJ0N25Q - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
250V
D
RDSON (MAX.)
1Ω
ID
1.1A
G
UIS, 100% Tested
S
.