EMBJ7A25G Datasheet - Excelliance MOS

EMBJ7A25G MOSFET

Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 250V RDSON (MAX.) 1.7Ω ID 0.5A Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg THERMAL RESIST.

EMBJ7A25G Datasheet (193.83 KB)