Datasheet4U Logo Datasheet4U.com

EMD08N06E Datasheet - Excelliance MOS

EMD08N06E MOSFET

    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  60V  D RDSON (MAX.)  8mΩ  ID  110A  G   UIS, Rg 100% Tested  S Pb‐Free Lead Plating & Halogen Free    ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)  PARAMETERS/TEST CONDITIONS  SYMBOL  EMD08N06E LIMITS  UNIT  Gate‐Source Voltage  Continuous Drain Current  Pulsed Drain Current1  TC = 25 °C  TC = 100 °C  Avalanche Current  Avalanche Energy  Repetitive Avalanche Energy.

EMD08N06E Datasheet (225.98 KB)

Preview of EMD08N06E PDF
EMD08N06E Datasheet Preview Page 2 EMD08N06E Datasheet Preview Page 3

Datasheet Details

Part number:

EMD08N06E

Manufacturer:

Excelliance MOS

File Size:

225.98 KB

Description:

Mosfet.

📁 Related Datasheet

EMD08N06A N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMD08N06H MOSFET (Excelliance MOS)

EMD08N10E MOSFET (Excelliance MOS)

EMD08N80F MOSFET (Excelliance MOS)

EMD02N06E MOSFET (Excelliance MOS)

EMD02N06TL8 Single N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMD02N10TL8 Single N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMD02N60A MOSFET (Excelliance MOS)

TAGS

EMD08N06E MOSFET Excelliance MOS

EMD08N06E Distributor