EMD08N06E Datasheet - Excelliance MOS

EMD08N06E-ExcellianceMOS.pdf

EMD08N06E Datasheet Preview — Preview of EMD08N06E PDF

Datasheet Details

Part number:

EMD08N06E

Manufacturer:

Excelliance MOS

File Size:

225.98 KB

Description:

Mosfet.

EMD08N06E, MOSFET

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 8mΩ ID 110A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMD08N06E LIMITS UNIT Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy

📁 Related Datasheet

EMD10 EMD12 EMD1S EMD2 EMD2050 EMD2055

📌 All Tags

EMD08N06E MOSFET Excelliance MOS

Excelliance MOS EMD08N06E-like datasheet