Datasheet4U Logo Datasheet4U.com

EMD08N06H Datasheet - Excelliance MOS

EMD08N06H MOSFET

EMD08N06H N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 8mΩ ID 60A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1,3 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=60A, RG=25Ω L = 0.05.

EMD08N06H Datasheet (206.66 KB)

Preview of EMD08N06H PDF
EMD08N06H Datasheet Preview Page 2 EMD08N06H Datasheet Preview Page 3

Datasheet Details

Part number:

EMD08N06H

Manufacturer:

Excelliance MOS

File Size:

206.66 KB

Description:

Mosfet.

📁 Related Datasheet

EMD08N06A N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMD08N06E MOSFET (Excelliance MOS)

EMD08N10E MOSFET (Excelliance MOS)

EMD08N80F MOSFET (Excelliance MOS)

EMD02N06E MOSFET (Excelliance MOS)

EMD02N06TL8 Single N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMD02N10TL8 Single N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMD02N60A MOSFET (Excelliance MOS)

TAGS

EMD08N06H MOSFET Excelliance MOS

EMD08N06H Distributor