Datasheet4U Logo Datasheet4U.com

EMD08N80F Datasheet - Excelliance MOS

EMD08N80F MOSFET

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 800V D RDSON (MAX.) 1.35Ω ID 8A G UIS, 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 3mH, ID=8A, RG=25Ω L = 0.5mH Power Dissipation TC .

EMD08N80F Datasheet (167.81 KB)

Preview of EMD08N80F PDF
EMD08N80F Datasheet Preview Page 2 EMD08N80F Datasheet Preview Page 3

Datasheet Details

Part number:

EMD08N80F

Manufacturer:

Excelliance MOS

File Size:

167.81 KB

Description:

Mosfet.

📁 Related Datasheet

EMD08N06A N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMD08N06E MOSFET (Excelliance MOS)

EMD08N06H MOSFET (Excelliance MOS)

EMD08N10E MOSFET (Excelliance MOS)

EMD02N06E MOSFET (Excelliance MOS)

EMD02N06TL8 Single N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMD02N10TL8 Single N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMD02N60A MOSFET (Excelliance MOS)

TAGS

EMD08N80F MOSFET Excelliance MOS

EMD08N80F Distributor