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EMD08N10E Datasheet - Excelliance MOS

EMD08N10E MOSFET

EMD08N10E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 7.5mΩ ID 130A G UIS, Rg 100% Tested S Pb‐Free Lead Plating ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=90A, RG=25Ω L = 0.05mH Power Dis.

EMD08N10E Datasheet (227.46 KB)

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Datasheet Details

Part number:

EMD08N10E

Manufacturer:

Excelliance MOS

File Size:

227.46 KB

Description:

Mosfet.

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EMD08N10E MOSFET Excelliance MOS

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