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EMP48N06G N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

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Description

N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 4.8mΩ ID 21A G UIS, Rg 100% Tested .

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Datasheet Specifications

Part number: EMP48N06G
Manufacturer: Excelliance MOS
File Size: 305.07 KB
Datasheet: EMP48N06G-ExcellianceMOS.pdf
Description: N-Channel Logic Level Enhancement Mode Field Effect Transistor

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EMP48N06G N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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