Datasheet4U Logo Datasheet4U.com

EMP21N03HR Datasheet - Excelliance MOS

EMP21N03HR N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 2.3mΩ ID 100A N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (Tc = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C ID TC = 100 °C IDM Avalanche Current IAS Avalanche Energy Repetitive Avalanche Energy3 L = 0.1mH EAS L = 0.05.

EMP21N03HR Datasheet (944.31 KB)

Preview of EMP21N03HR PDF
EMP21N03HR Datasheet Preview Page 2 EMP21N03HR Datasheet Preview Page 3

Datasheet Details

Part number:

EMP21N03HR

Manufacturer:

Excelliance MOS

File Size:

944.31 KB

Description:

N-channel logic level enhancement mode field effect transistor.

📁 Related Datasheet

EMP21N03HC MOSFET (Excelliance MOS)

EMP210 9.5 - 12 GHz Power Amplifier MMIC (Excelics Semiconductor)

EMP211 9.5 - 12.0 GHz Power Amplifier MMIC (Excelics Semiconductor)

EMP212 9.50 - 12.0 GHz Power Amplifier MMIC (Excelics Semiconductor)

EMP213 12.5 - 15.5 GHz Power Amplifier MMIC (Excelics Semiconductor)

EMP2133 300mA CMOS Linear Regulator (Elite Semiconductor)

EMP214 12.50- 15.50 GHz Power Amplifier MMIC (Excelics Semiconductor)

EMP215 12.5 - 16.5 GHz Power Amplifier MMIC (Excelics Semiconductor)

TAGS

EMP21N03HR N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

EMP21N03HR Distributor