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EMP21N03HR Datasheet - Excelliance MOS

EMP21N03HR N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 2.3mΩ ID 100A N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (Tc = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C ID TC = 100 °C IDM Avalanche Current IAS Avalanche Energy Repetitive Avalanche Energy3 L = 0.1mH EAS L = 0.05.

EMP21N03HR-ExcellianceMOS.pdf

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Datasheet Details

Part number:

EMP21N03HR

Manufacturer:

Excelliance MOS

File Size:

944.31 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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EMP21N03HR EMP21N03HR N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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