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EMP29N04E Datasheet - Excelliance MOS

EMP29N04E N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V RDSON (MAX.) 2.9mΩ ID 172A N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMP29N04E LIMITS UNIT Gate-Source Voltage VGS ±20 V Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID TC = 100 °C IDM 172 139 A 674 Avalanche Current IAS 69 Avalanche Energy .

EMP29N04E Datasheet (373.37 KB)

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Datasheet Details

Part number:

EMP29N04E

Manufacturer:

Excelliance MOS

File Size:

373.37 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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EMP29N04E N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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