EMP29N04AS
Excelliance MOS
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Single n-channel logic level enhancement mode field effect transistor. N-CH BVDSS 40V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 3.6mΩ 4.8mΩ ID @TC=25℃ 83.0A ID @TA=25℃ 16.0A Single N Channel M
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EMP29N04E - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
40V
RDSON (MAX.)
2.9mΩ
ID
172A
N Channel MOSFET
UIS, Rg.
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