EMZB08P03H Datasheet - Excelliance MOS

EMZB08P03H - P-Channel Logic Level Enhancement Mode Field Effect Transistor

P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS RDSON (MAX.) -30V 8.5mΩ ID -70A P Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ESD Protection ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage SYMBOL VGS EMZB08P03H LIMITS ±20 UNIT V Continuous Drain Current TC = 25 °C ID TA= 25 °C(t≦10s) TA= 25 °C(Steady-State) -70 -21 A -14 Pulsed Drain Current1 TC = 1.

EMZB08P03H-ExcellianceMOS.pdf

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Datasheet Details

Part number:

EMZB08P03H

Manufacturer:

Excelliance MOS

File Size:

939.70 KB

Description:

P-channel logic level enhancement mode field effect transistor.

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EMZB08P03H P-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS